基本信息:
- 专利标题： Preparation of high-purity thin film
- 专利标题（中）：高纯薄膜的制备
- 申请号：EP90310060.0 申请日：1990-09-13
- 公开(公告)号：EP0418091A3 公开(公告)日：1991-10-23
- 发明人： Chiba, Koichi , Saeki, Masao , Umeda, Hiroshi , Yoshimatsu, Shiro , Ogawa, Yoichi , Ozaka, Tsuyoshi
- 申请人： NIPPON STEEL CORPORATION , NATIONAL RESEARCH INSTITUTE FOR METALS
- 申请人地址： 6-3 Otemachi 2-chome Chiyoda-ku Tokyo 100 JP
- 专利权人： NIPPON STEEL CORPORATION,NATIONAL RESEARCH INSTITUTE FOR METALS
- 当前专利权人： NIPPON STEEL CORPORATION,NATIONAL RESEARCH INSTITUTE FOR METALS
- 当前专利权人地址： 6-3 Otemachi 2-chome Chiyoda-ku Tokyo 100 JP
- 代理机构： Geering, Keith Edwin
- 优先权： JP237293/89 19890914
- 主分类号： C23C14/22
- IPC分类号： C23C14/22 ; C23C14/32 ; C23C16/48
摘要：
Disclosed is a proces for the gas-phase preparation of a thin film. In this process, atoms or molecules present in the reaction system are irradiated with laser beams having an appropriately selected wavelength, to excite a target atom or molecule, whereby a selective excitation and ionization are effected. The target atom or molecule is separated from another atom or molecule by an electric field to form a high purity thin film, or the target atom or molecule unnecessary for formation of thin film is taken out by an electric field, and a high-purity thin film is formed. Furthermore, the selectively excited atom or molecule is selectively reacted with an atom or molecule independently introduced, and the reaction product is separated to form a high purity thin film, or the reaction product unnecessary for a formation of a thin film is taken out and a high purity thin film is formed. A thin film having a high purity can be prepared according to this process.
公开/授权文献:
- EP0418091A2 Preparation of high-purity thin film 公开/授权日：1991-03-20