基本信息:
- 专利标题： Charge amplifier circuit comprising a junction field effect transistor
- 专利标题（中）：连接场效应晶体管
- 申请号：EP89300335.0 申请日：1989-01-13
- 公开(公告)号：EP0325383A3 公开(公告)日：1990-02-28
- 发明人： Nashashibi, Tawfic Saeb
- 申请人： LINK ANALYTICAL LIMITED
- 申请人地址： Halifax Road High Wycombe Bucks. HP12 3SE GB
- 专利权人： LINK ANALYTICAL LIMITED
- 当前专利权人： LINK ANALYTICAL LIMITED
- 当前专利权人地址： Halifax Road High Wycombe Bucks. HP12 3SE GB
- 代理机构： Skone James, Robert Edmund
- 优先权： GB8800949 19880116
- 主分类号： H01L29/80
- IPC分类号： H01L29/80 ; H03F3/70
摘要：
An Injector Junction Field Effect Transistor (IJFET) is disclosed which, in addition to having two gates (G1, G2) a drain (D) and a source (S), also has an injector (I). The device may be used as a high impedance charge or current amplifier in, for example, an x-ray flourescence device. On applying current to the injector, carriers are introduced into the channel of the device, allowing a small gate leakage current to flow to restore charge to the input. A small restore current is therefore controllable by low impedance injector circuits.
公开/授权文献:
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L29/00 | 专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件 |
| --------H01L29/02 | .按其半导体本体的特征区分的 |
| ----------H01L29/68 | ..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的 |
| ------------H01L29/70 | ...双极器件 |
| --------------H01L29/762 | ....电荷转移器件 |
| ----------------H01L29/80 | .....由PN结或其他整流结栅产生场效应的 |