基本信息:
- 专利标题： A method of manufacturing an oxide single crystal
- 专利标题（中）：一种制造氧化物单晶的方法
- 申请号：EP83305489.3 申请日：1983-09-19
- 公开(公告)号：EP0106547B1 公开(公告)日：1989-05-17
- 发明人： Yorizumi, Mineo , Tamura, Hidemasa , Makino, Yoshimi
- 申请人： SONY CORPORATION
- 申请人地址： 7-35 Kitashinagawa 6-chome Shinagawa-ku Tokyo 141 JP
- 专利权人： SONY CORPORATION
- 当前专利权人： SONY CORPORATION
- 当前专利权人地址： 7-35 Kitashinagawa 6-chome Shinagawa-ku Tokyo 141 JP
- 代理机构： Purvis, William Michael Cameron
- 优先权： JP162783/82 19820918
- 主分类号： C30B29/26
- IPC分类号： C30B29/26 ; C30B13/24
摘要：
An oxide single crystal is manufactured by a process in which a starting material for the growth of a crystal is melted by heat into a predetermined grown crystal through direct heating, wherein a gaseous mixture of an oxygen gas and an inert gas is used as the atmospheric gas during growing, and the concentration of the oxygen gas in the gaseous mixture is set to lower than 50% as expressed by the oxygen partial pressure. The invention also contemplates a method in which a starting material for the growth of crystal is melted by heat into a predetermined grown crystal through direct heating in an oxygen containing atmosphere and then the thus grown crystal is cooled, wherein the temperature for the crystal during growing is maintained above 1000 DEG C, and the grown crystal is cooled before or immediately after the completion of growing after replacing or while replacing the atmosphere at least partially with an inert gas.
公开/授权文献:
- EP0106547A2 A method of manufacturing an oxide single crystal 公开/授权日：1984-04-25