The embodiment of the application provides electrostatic ring structure. Electrostatic ring structure includes the transistor that is provided with first electrode, second electrode, grid and active area, wherein the 2nd electrode collar winds the first electrode sets up, and with an eletrode spacing sets for the distance, the active area overlap joint is in the first electrode with between the second electrode, follow when the electrostatic charge when the first electrode flows in, the electrostatic charge via the active area, by the second electrode flows. Electrostatic ring structure in this application is not only compacter in looks isospace inner structure, has increased the route of releasing of electrostatic charge in addition for the speed of releasing of static, increased effective breadth length ratio, improved the electrostatic discharge ability. Further, the electrostatic ring structure of this application can be applied to the high frequency and show the field because static electricity discharge is fast.