
基本信息:
- 专利标题: 功率芯片互连结构
- 专利标题(英):Power chip interconnection structure
- 申请号:CN201420655030.1 申请日:2014-11-05
- 公开(公告)号:CN204204848U 公开(公告)日:2015-03-11
- 发明人: 王腾 , 郑静 , 常永嘉 , 董晓伟
- 申请人: 中国电子科技集团公司第四十三研究所
- 申请人地址: 安徽省合肥市高新区合欢路19号
- 专利权人: 中国电子科技集团公司第四十三研究所
- 当前专利权人: 中国电子科技集团公司第四十三研究所
- 当前专利权人地址: 安徽省合肥市高新区合欢路19号
- 代理机构: 合肥天明专利事务所
- 代理人: 孙永刚
- 主分类号: H01L23/538
- IPC分类号: H01L23/538
The utility model relates to the hybrid integrated circuit power chip three-dimensional soldering interconnection technology, and concretely relates to a power chip interconnection structure. The interconnection structure comprises a power chip, a transition sheet metal and a copper belt or a copper frame. An interconnection method comprises the transition sheet metal is soldered on the power chip, and soldering interconnection of the power chip and the copper belt on a substrate is realized through the transition metal sheet. According to the power chip interconnection structure provided by the utility model, interconnection in a graded soldering manner is adopted, low power consumption interconnection of the power chip of a hybrid integrated circuit can be realized, the interconnection reliability is also raised through copper structure interconnection, and the structure is simple, and easy to assemble.
IPC结构图谱:
H | 电学 |
--H01 | 基本电气元件 |
----H01L | 半导体器件;其他类目未包含的电固体器件 |
------H01L23/00 | 半导体或其他固态器件的零部件 |
--------H01L23/34 | .冷却装置;加热装置;通风装置或温度补偿装置 |
----------H01L23/538 | ..制作在绝缘衬底上或内的多个半导体芯片间的互连结构 |