
基本信息:
- 专利标题: 半导体激光测试装置
- 专利标题(英):Semiconductor laser testing device
- 申请号:CN201420380622.7 申请日:2014-07-10
- 公开(公告)号:CN204128985U 公开(公告)日:2015-01-28
- 发明人: 胡海 , 夏虹 , 赵楚中 , 刘文斌 , 李成鹏
- 申请人: 深圳清华大学研究院 , 深圳瑞波光电子有限公司
- 申请人地址: 广东省深圳市南山区高新技术产业园南区深圳清华大学研究院大楼A302室
- 专利权人: 深圳清华大学研究院,深圳瑞波光电子有限公司
- 当前专利权人: 深圳清华大学研究院,深圳瑞波光电子有限公司
- 当前专利权人地址: 广东省深圳市南山区高新技术产业园南区深圳清华大学研究院大楼A302室
- 代理机构: 深圳市鼎言知识产权代理有限公司
- 代理人: 孔丽霞
- 主分类号: G01N21/95
- IPC分类号: G01N21/95
The utility model provides a semiconductor laser testing device. The semiconductor laser testing device comprises a conductor object stage used for bearing a sample, a power supply, an optical system opposite to the conductor object stage as well as a laser light source, an imaging device and a spectrograph which are optically coupled with the optical system, wherein the power supply comprises an anode probe and a cathode probe and is used for outputting working voltage to the sample through the anode probe and the cathode probe so as to enable the sample to perform electroluminescence (EL); the laser light source is used for emitting laser light, and the laser light is projected to the sample through the optical system so as to enable the sample to perform photoluminescence (PL); the imaging device is used for imaging the EL or PL sample through the optical system; and the spectrograph is used for measuring wavelength of the EL or PL sample through the optical system.
IPC结构图谱:
G | 物理 |
--G01 | 测量;测试 |
----G01N | 借助于测定材料的化学或物理性质来测试或分析材料 |
------G01N21/00 | 利用光学手段,即利用红外光、可见光或紫外光来测试或分析材料 |
--------G01N21/01 | .便于进行光学测试的装置或仪器 |
----------G01N21/88 | ..测试瑕疵、缺陷或污点的存在 |
------------G01N21/95 | ...特征在于待测物品的材料或形状 |