The utility model relates to a high-power IGBT (insulated gate bipolar transistor) redundant drive protection circuit, which is characterized in that a charging circuit, a driving circuit, a switching tube unit, an overcurrent and short-circuit protection circuit, an overvoltage protection detecting circuit and a temperature monitoring and protection circuit are connected with an IGBT power device, the redundant drive circuit is connected with the switching tube unit, the switching unit is connected with a grid electrode of the IGBT power device, and the switching tube unit is further connected with the driving circuit. The beneficial effects are that the driving device can release surge current quickly, reduces grid voltage, prevents error conduction of the an IGBT, takes effective protection measures on aspects of overvoltage, overcurrent, overheating and the like, and can ensure the IGBT to operate safely and reliably; and the high-power IGBT redundant drive protection circuit meets requirements of IGBT protection, and is good in stability, strong in interference resistance, high in reliability and long in service life.