基本信息:
- 专利标题： 一种沟槽型快恢复二极管
- 专利标题（英）：Groove-type fast recovery diode
- 申请号：CN201320677023.7 申请日：2013-10-30
- 公开(公告)号：CN203607417U 公开(公告)日：2014-05-21
- 发明人： 吴迪 , 刘钺杨 , 何延强 , 包海龙 , 刘隽 , 张宇 , 凌平
- 申请人： 国家电网公司 , 国网上海市电力公司 , 国网智能电网研究院
- 申请人地址： 北京市西城区西长安街86号
- 专利权人： 国家电网公司,国网上海市电力公司,国网智能电网研究院
- 当前专利权人： 国家电网公司,国网上海市电力公司,国网智能电网研究院
- 当前专利权人地址： 北京市西城区西长安街86号
- 代理机构： 北京安博达知识产权代理有限公司
- 代理人： 徐国文
- 主分类号： H01L29/06
- IPC分类号： H01L29/06 ; H01L29/861
The utility model relates to a power semiconductor device, in particular to a groove-type fast recovery diode. The fast recovery diode comprises a substrate and a P region, wherein the P region is formed on the substrate. A PN junction is formed by the P region and the substrate together; groove regions are symmetrically arranged on the two sides of the PN junction; the substrate is a uniformly doped N-type silicon substrate; and an oxide layer grows on the N-layer of the substrate. The bent part at the edge of the PN junction is removed by wet etching, electric field concentration caused by curvature of the PN junction is eliminated, and the high voltage diode with passivation and with reverse withstand voltage close to that of the parallel planar junction can be manufactured through three times of photoetching process. Therefore, the groove-type fast recovery diode has the characteristics of simple manufacturing mode and low process requirements.