基本信息:
- 专利标题： 电源电平升高的可编程逻辑器件存储器单元
- 专利标题（英）：Programmable logic device memory elements with elevated power supply levels
- 申请号：CN200610148491.X 申请日：2006-11-17
- 公开(公告)号：CN1967719A 公开(公告)日：2007-05-23
- 发明人： 刘令时 , 陈天沐
- 申请人： 奥特拉有限公司
- 申请人地址： 美国加利福尼亚
- 专利权人： 奥特拉有限公司
- 当前专利权人： 奥特拉有限公司
- 当前专利权人地址： 美国加利福尼亚
- 代理机构： 北京三友知识产权代理有限公司
- 代理人： 李辉
- 优先权： 60/737,868 2005.11.17 US; 11/335,437 2006.01.18 US
- 主分类号： G11C11/412
- IPC分类号： G11C11/412 ; G11C11/413 ; G11C8/16 ; G06F13/16
Programmable logic device memory elements with elevated power supply levels are provided. The programmable logic device integrated circuits contain programmable core logic powered at a programmable core logic power supply voltage. Programmable logic device configuration data is loaded into the memory elements to configure the programmable core logic to perform a custom logic function. During normal operation the memory elements may be powered with a power supply voltage that is larger than the programmable core logic power supply voltage. During data loading operations, the memory elements may be powered with a power supply voltage equal to the programmable core logic power supply voltage. Data loading and reading circuitry loads data into the memory elements and reads data from the memory elements. Address signals are generated by the data loading and reading circuitry. The address signals may have larger voltage levels during data writing operations than during read operations.
公开/授权文献:
- CN1967719B 电源电平升高的可编程逻辑器件存储器单元 公开/授权日：2011-08-17
IPC结构图谱:
| G11C11/56 | 组优先于G11C11/02至G11C11/54中各组。 |
| --G11C11/19 | .在谐振电路中应用非线性电抗器件的 |
| ----G11C11/26 | ..应用放电管的 |
| ------G11C11/40 | ...应用晶体管的 |
| --------G11C11/401 | ....形成需要刷新或电荷再生的单元的，即，动态单元的 |
| ----------G11C11/412 | .....只使用场效应晶体管的 |