基本信息:
- 专利标题： 氮化物晶体、氮化物晶体衬底、含有外延层的氮化物晶体衬底、半导体器件及其制备方法
- 专利标题（英）：Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same
- 申请号：CN200610093296.1 申请日：2006-06-23
- 公开(公告)号：CN1896343B 公开(公告)日：2012-07-04
- 发明人： 石桥惠二 , 楫登纪子 , 中畑成二 , 西浦隆幸
- 申请人： 住友电气工业株式会社
- 申请人地址： 日本大阪府
- 专利权人： 住友电气工业株式会社
- 当前专利权人： 三菱化学株式会社
- 当前专利权人地址： 日本东京都
- 代理机构： 中科专利商标代理有限责任公司
- 代理人： 陈平
- 优先权： 2005-183111 2005.06.23 JP
- 主分类号： C30B29/38
- IPC分类号： C30B29/38 ; H01L21/08 ; H01L21/18 ; H01L21/20
A nitride crystal is characterized in that, in connection with plane spacing of arbitrary specific parallel crystal lattice planes (1d) of the nitride crystal (1) obtained from X-ray diffraction measurement performed with variation of X-ray penetration depth from a surface of the crystal while X-ray diffraction conditions of the specific parallel crystal lattice planes (1d) are satisfied, a uniform distortion at a surface layer (1a) of the crystal represented by a value of |d 1 - d 2 |/d 2 obtained from the plane spacing d 1 at the X-ray penetration depth of 0.3 mu m and the plane spacing d 2at the X-ray penetration depth of 5 mu m is equal to or lower than 2.1 x 10 -3 . The above configuration provides the nitride crystal having a crystal surface layer that is evaluated directly and reliably without breaking the crystal so that it can be used in a preferred fashion as a substrate for a semiconductor device as well as the nitride crystal substrate, an epilayer-containing nitride crystal substrate, a semiconductor device and a method of manufacturing the same.
公开/授权文献:
- CN1896343A 氮化物晶体、氮化物晶体衬底、含有外延层的氮化物晶体衬底、半导体器件及其制备方法 公开/授权日：2007-01-17