基本信息:
- 专利标题： 带有底切区域中的绝缘层环的沟槽电容器及其制造方法
- 专利标题（英）：Trench capacitors with insulating layer collars in undercut regions and method of fabricating the same
- 申请号：CN200510062415.2 申请日：2005-03-28
- 公开(公告)号：CN1674259B 公开(公告)日：2010-10-06
- 发明人： 郑淑真 , 李承桓 , 金晟泰 , 金荣善 , 林载顺 , 朴影根
- 申请人： 三星电子株式会社
- 申请人地址： 韩国京畿道
- 专利权人： 三星电子株式会社
- 当前专利权人： 三星电子株式会社
- 当前专利权人地址： 韩国京畿道
- 代理机构： 北京市柳沈律师事务所
- 代理人： 陶凤波; 侯宇
- 优先权： 20765/04 2004.03.26 KR
- 主分类号： H01L21/8242
- IPC分类号： H01L21/8242 ; H01L21/82 ; H01L27/108
Trench capacitors that have insulating layer collars in undercut regions and methods of fabricating such trench capacitors are provided. Some methods of fabricating a trench capacitor include forming a first layer on a substrate. A second layer is formed on the first layer opposite to the substrate. A mask is formed that has an opening on top of the first and second layers. A first trench is formed by removing a portion of the first and second layers through the opening in the mask. A portion of the first layer under the second layer is removed to form an undercut region under the second layer. An insulating layer collar is formed in the undercut region under the second layer. A second trench is formed that extends from the first trench by removing a portion of the substrate through the opening in the mask. A buried plate is formed in the substrate along the second trench. A dielectric layer is formed on an inner wall and bottom of the second trench. A storage electrode is formed in the second trench on the dielectric layer.
公开/授权文献:
- CN1674259A 带有底切区域中的绝缘层环的沟槽电容器及其制造方法 公开/授权日：2005-09-28
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/67 | .专门适用于在制造或处理过程中处理半导体或电固体器件的装置；专门适合于在半导体或电固体器件或部件的制造或处理过程中处理晶片的装置 |
| ----------H01L21/71 | ..限定在组H01L21/70中的器件的特殊部件的制造 |
| ------------H01L21/78 | ...把衬底连续地分成多个独立的器件 |
| --------------H01L21/782 | ....制造多个器件，每一个由单个电路元件组成 |
| ----------------H01L21/822 | .....衬底是采用硅工艺的半导体的 |
| ------------------H01L21/8222 | ......双极工艺 |
| --------------------H01L21/8234 | .......MIS工艺 |
| ----------------------H01L21/8239 | ........存储器结构 |
| ------------------------H01L21/8242 | .........动态随机存取存储结构（DRAM） |