基本信息:
- 专利标题： 静电放电防护电路与相关的金属氧化半导体晶体管结构
- 专利标题（英）：Static discharge protection circuit and relative metal oxide semiconductor transistor structure
- 申请号：CN02145725.5 申请日：2002-10-08
- 公开(公告)号：CN1489210A 公开(公告)日：2004-04-14
- 发明人： 柯明道 , 徐国钧
- 申请人： 台湾积体电路制造股份有限公司
- 申请人地址： 台湾省新竹
- 专利权人： 台湾积体电路制造股份有限公司
- 当前专利权人： 台湾积体电路制造股份有限公司
- 当前专利权人地址： 台湾省新竹
- 代理机构： 隆天国际知识产权代理有限公司
- 代理人： 潘培坤; 楼仙英
- 主分类号： H01L23/60
- IPC分类号： H01L23/60 ; H01L29/78
Protection circuit of electro-static discharge (ESD) includes a component possessing polydactyly structure, multiple components for measuring transient state current and multiple feedback line. The component of polydactyly structure possesses finger grids, finger source electrode and at least one drain electrode, which is coupled to a joint mat. A bipolarity junction transistor (BJT) is parasitized under each finger grid. Each finger source electrode is emitter of one of BJT. Each transient state current measuring component is coupled between relevant finger source electrode and a power source line in order to detect transient state current passing through relevant finger grid. Each feedback line is coupled between base electrode of first BJT and emitter of second BJT in order to trigger the first BJT to discharge ESD current, if ESD event occurs.
公开/授权文献:
- CN1241262C 静电放电防护电路与相关的金属氧化半导体晶体管结构 公开/授权日：2006-02-08
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L23/00 | 半导体或其他固态器件的零部件 |
| --------H01L23/552 | .防辐射保护装置，例如光 |
| ----------H01L23/60 | ..防静电荷或放电的保护装置，例如法拉第防护屏 |