基本信息:
- 专利标题： 用于形成铁电薄膜的组合物、铁电薄膜以及铁电薄膜的制造方法
- 专利标题（英）：Ferroelectric thin film formation composition, ferroelectric thin film, and method of fabricating thin film
- 申请号：CN200410062547.0 申请日：2004-06-30
- 公开(公告)号：CN1323979C 公开(公告)日：2007-07-04
- 发明人： 角浩二
- 申请人： 精工爱普生株式会社
- 申请人地址： 日本东京都
- 专利权人： 精工爱普生株式会社
- 当前专利权人： 精工爱普生株式会社
- 当前专利权人地址： 日本东京都
- 代理机构： 北京东方亿思知识产权代理有限责任公司
- 代理人： 柳春雷
- 优先权： 188971/2003 2003.06.30 JP; 155242/2004 2004.05.25 JP
- 主分类号： C04B35/00
- IPC分类号： C04B35/00 ; C04B35/632 ; C01G57/00
Provided are a ferroelectric thin film formation composition, a ferroelectric thin film and a method of fabricating a ferroelectric thin film, the ferroelectric thin film formation composition being capable of effectively preventing occurrence of a striation and expanding the range of choice of a sol composition. A ferroelectric thin film formation composition containing a metal compound that is a material to form a ferroelectric thin film contains a hydrophobic compound which includes a reactive group reacting with a hydroxy group and in which at least an end side of a remnant exclusive of the reactive group has a hydrophobic property. Thus, it is possible to expand the range of choice of the sol composition while effectively suppressing occurrence of the striation.
公开/授权文献:
- CN1609044A 用于形成铁电薄膜的组合物、铁电薄膜以及铁电薄膜的制造方法 公开/授权日：2005-04-27