基本信息:
- 专利标题： 通过受控退火制造碳化硅功率器件的方法
- 专利标题（英）：Method of fabricating silicon carbide power device by controlled annealing
- 申请号：CN99807101.3 申请日：1999-06-07
- 公开(公告)号：CN1304546A 公开(公告)日：2001-07-18
- 发明人： A·V·苏沃罗夫 , J·W·帕穆尔 , R·辛格
- 申请人： 克里公司
- 申请人地址： 美国北卡罗来纳州
- 专利权人： 克里公司
- 当前专利权人： 克里公司
- 当前专利权人地址： 美国北卡罗来纳州
- 代理机构： 中国专利代理(香港)有限公司
- 代理人： 陈霁; 王忠忠
- 优先权： 09/093,208 1998.06.08 US
- 国际申请： PCT/US1999/12713 1999.06.07
- 国际公布： WO1999/67825 EN 1999.12.29
- 进入国家日期： 2000-12-07
- 主分类号： H01L21/04
- IPC分类号： H01L21/04 ; H01L21/265
Silicon carbide power devices are fabricated by masking the surface of a silicon carbide substrate to define an opening at the substrate, implanting p-type dopants into the silicon carbide substrate through the opening at implant energy and dosage that form a deep p-type implant, and implanting n-type dopants into the silicon carbide substrate through the opening at implant energy and dosage that form a shallow n-type implant relative to the deep p-type implant. The deep p-type implant and the shallow n-type implant are annealed at less than 1650 DEG C., but preferably more than about 1500 DEG . The annealing preferably takes place for between about five minutes and about thirty minutes. Ramp-up time from room temperature to the anneal temperature is also controlled to be less than about one hundred minutes but more than about thirty minutes. Ramp-down time after annealing is also controlled by decreasing the temperature from the annealing temperature to below about 1500 DEG C. in less than about two minutes. By controlling the ramp-up time, the annealing time and/or temperature and/or the ramp-down time, high performance silicon carbide power devices may be fabricated.
公开/授权文献:
- CN1132225C 通过受控退火制造碳化硅功率器件的方法 公开/授权日：2003-12-24
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/02 | .半导体器件或其部件的制造或处理 |
| ----------H01L21/04 | ..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层 |