![薄膜晶体管及其制备方法、显示装置](/CN/2019/1/221/images/201911105523.jpg)
基本信息:
- 专利标题: 薄膜晶体管及其制备方法、显示装置
- 专利标题(英):Thin film transistor, preparation method thereof and display device
- 申请号:CN201911105523.1 申请日:2019-11-13
- 公开(公告)号:CN110808290A 公开(公告)日:2020-02-18
- 发明人: 朱磊 , 李志勇 , 杨硕 , 杨润洲
- 申请人: 京东方科技集团股份有限公司 , 重庆京东方光电科技有限公司
- 申请人地址: 北京市朝阳区酒仙桥路10号
- 专利权人: 京东方科技集团股份有限公司,重庆京东方光电科技有限公司
- 当前专利权人: 京东方科技集团股份有限公司,重庆京东方光电科技有限公司
- 当前专利权人地址: 北京市朝阳区酒仙桥路10号
- 代理机构: 北京安信方达知识产权代理有限公司
- 代理人: 曲鹏; 解婷婷
- 主分类号: H01L29/786
- IPC分类号: H01L29/786 ; H01L21/336
The invention provides a thin film transistor, a preparation method thereof and a display device. The thin film transistor comprises a gate electrode and an active layer which are arranged on a substrate, wherein the gate electrode is in an arch shape, and the active layer is arranged in the arch in a penetrating mode, and a channel surrounded by the gate electrode is formed. By forming the channel annularly surrounded by the gate electrode, the area of the thin film transistor is effectively reduced, the high-resolution requirement is met, and the problem that the resolution of an existing structure is difficult to improve by reducing the area of the thin film transistor is effectively solved. And meanwhile, through the structure that the gate electrode annularly surrounds the channel, the control of the gate electrode on the channel conductivity is enhanced, and the driving capability and the working stability of the thin film transistor are effectively improved.
IPC结构图谱:
H | 电学 |
--H01 | 基本电气元件 |
----H01L | 半导体器件;其他类目未包含的电固体器件 |
------H01L29/00 | 专门适用于整流、放大、振荡或切换,并具有至少一个电位跃变势垒或表面势垒的半导体器件;具有至少一个电位跃变势垒或表面势垒,例如PN结耗尽层或载流子集结层的电容器或电阻器;半导体本体或其电极的零部件 |
--------H01L29/02 | .按其半导体本体的特征区分的 |
----------H01L29/68 | ..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的 |
------------H01L29/70 | ...双极器件 |
--------------H01L29/762 | ....电荷转移器件 |
----------------H01L29/78 | .....由绝缘栅产生场效应的 |
------------------H01L29/786 | ......薄膜晶体管 |