The invention discloses a preparation method for a transparent semiconductor material double-sided alignment mark. The preparation method comprises the following steps of: determining a laser incidentposition on the front surface of a transparent semiconductor material sample according to mark process parameters input by a user, forming a laser mark in the transparent semiconductor material sample according to the laser incident position, and forming an alignment mark on the back surface of the transparent semiconductor material sample according to the laser mark. According to the preparationmethod for the transparent semiconductor material double-sided alignment mark provided by the embodiment of the invention, the laser mark is formed in the transparent semiconductor material;, and thealignment mark is formed on the back surface of the sample according to the laser mark, and therefore, the preparation method does not need to form an etching mark on the surface of the sample, ensures the integrity of the front surface of the sample to the maximum extent, does not cause damage to the device structure in the sample, avoids the influence of sample surface damage on device distribution in the sample, and improves the performance and reliability of the sample.