
基本信息:
- 专利标题: 一种Micro-LED芯片的转移方法
- 专利标题(英):Transfer method of Micro-LED chip
- 申请号:CN201911077056.6 申请日:2019-11-06
- 公开(公告)号:CN110767582A 公开(公告)日:2020-02-07
- 发明人: 陈新 , 杨冠南 , 崔成强 , 刘强
- 申请人: 广东工业大学
- 申请人地址: 广东省广州市越秀区东风东路729号
- 专利权人: 广东工业大学
- 当前专利权人: 广东工业大学
- 当前专利权人地址: 广东省广州市越秀区东风东路729号
- 代理机构: 佛山市禾才知识产权代理有限公司
- 代理人: 梁永健; 单蕴倩
- 主分类号: H01L21/67
- IPC分类号: H01L21/67 ; H01L27/15 ; H01L33/48 ; H01L33/62
The invention discloses a transfer method of a Micro-LED chip. The transfer method comprises the following steps of: (1) carrying out surface charge treatment on a chip; (2) presetting an electrode array on a transfer substrate, immersing the chip in a first solution, immersing the transfer substrate and an electrode into the first solution, connecting one of the transfer substrate and the electrode with a positive electrode of a power supply, and connecting the other one of the two with the negative electrode of the power supply, wherein the transfer substrate and the chip have opposite charges; (3) electrifying the power supply, wherein chips distributed in an array manner are adsorbed on the electrode array on the transfer substrate; (4) inversely mounting the transfer substrate and a bearing substrate to align the chip on the transfer substrate with the bonding pad on the bearing substrate; (5) separating the chip from the surface of the transfer substrate, and transferring the chip to the bonding pad of the bearing substrate; and (6) repeating the above steps, and sequentially transferring the chips with various shapes to the same bearing substrate. According to the transfer method of a Micro-LED chip, huge transfer of three-primary-color Micro-LED chips is achieved, and the operation is simple, so that the production efficiency is improved, and the production cost is reduced.
公开/授权文献:
- CN110767582B 一种Micro-LED芯片的转移方法 公开/授权日:2020-05-26
IPC结构图谱:
H | 电学 |
--H01 | 基本电气元件 |
----H01L | 半导体器件;其他类目未包含的电固体器件 |
------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
--------H01L21/67 | .专门适用于在制造或处理过程中处理半导体或电固体器件的装置;专门适合于在半导体或电固体器件或部件的制造或处理过程中处理晶片的装置 |