The invention provides a polycrystalline silicon film deposition system and method. The polycrystalline silicon film deposition system comprises a wafer loading chamber, a process chamber, an oxygen-containing gas supply device and a protective gas supply device, wherein the process chamber communicates with the loading chamber; the oxygen-containing gas supply device comprises an oxygen-containing gas supply pipeline; one end of the oxygen-containing gas supply pipeline extends into the wafer loading chamber and is used for supplying oxygen-containing gas into the wafer loading chamber at least in the process of transferring wafers from the process chamber to the wafer loading chamber after a polycrystalline silicon film is deposited; the protective gas supply device comprises a protective gas supply pipeline; one end of the protective gas supply pipeline extends into the wafer loading chamber; and the protective gas supply pipeline is used for providing protective gas into the waferloading chamber at least when the oxygen-containing gas supply device does not provide the oxygen-containing gas into the wafer loading chamber. According to the polycrystalline silicon film deposition system, the surfaces of polycrystalline silicon films deposited on the surfaces of the wafers can be oxidized, the adverse effect on the subsequent photoetching process is avoided, and it ensures that the key dimension of the subsequent photoetching process has high uniformity.