![一种IGBT正向恢复特性等效测试电路](/CN/2019/1/160/images/201910801746.jpg)
基本信息:
- 专利标题: 一种IGBT正向恢复特性等效测试电路
- 专利标题(英):IGBT forward recovery characteristic equivalent test circuit
- 申请号:CN201910801746.5 申请日:2019-08-28
- 公开(公告)号:CN110554296A 公开(公告)日:2019-12-10
- 发明人: 郝一 , 徐云飞 , 周哲 , 刘海军 , 王朝亮 , 许烽
- 申请人: 全球能源互联网研究院有限公司 , 国网浙江省电力有限公司 , 国家电网有限公司
- 申请人地址: 北京市昌平区未来科技城滨河大道18号
- 专利权人: 全球能源互联网研究院有限公司,国网浙江省电力有限公司,国家电网有限公司
- 当前专利权人: 全球能源互联网研究院有限公司,国网浙江省电力有限公司,国家电网有限公司
- 当前专利权人地址: 北京市昌平区未来科技城滨河大道18号
- 代理机构: 北京三聚阳光知识产权代理有限公司
- 代理人: 李博洋
- 主分类号: G01R31/26
- IPC分类号: G01R31/26
The invention discloses an IGBT forward recovery characteristic equivalent test circuit, which comprises a current and voltage test device, a test load and a signal generator, and is characterized inthat the test load and the signal generator are connected in parallel and are connected with an IGBT module to be tested in parallel, and the current and voltage test device is connected with the IGBTmodule to be tested; the signal generator is used for sending out an interference signal, the test load is used for adjusting the interference signal to obtain a working condition signal, and the current and voltage measuring device is used for measuring the forward recovery current and the forward recovery voltage of the IGBT module to be tested after receiving the working condition signal. According to the invention, high-amplitude disturbance is applied to the IGBT; therefore, the IGBT generates a forward recovery effect under the action of the interference signal; therefore, according tothe IGBT forward recovery characteristic equivalent test circuit provided by the embodiment of the invention, the forward recovery characteristic of the IGBT can be tested through a simple circuit, the process and equipment for additionally setting up a high-voltage test platform are omitted, and the efficiency of IGBT forward recovery characteristic test is improved.
IPC结构图谱:
G | 物理 |
--G01 | 测量;测试 |
----G01R | 测量电变量;测量磁变量(通过转换成电变量对任何种类的物理变量进行测量参见G01类名下的 |
------G01R31/00 | 电性能的测试装置;电故障的探测装置;以所进行的测试在其他位置未提供为特征的电测试装置 |
--------G01R31/26 | .单个半导体器件的测试 |