The invention discloses a method for preparing a selective front passivation PERC solar cell, comprising the steps of: (1) texturing P-type silicon; (2) forming an N-type film on a front surface; (3)waxing an area, corresponding to a positive silver electrode pattern, on the N-type film, and drying the wax; (4) removing the N-type film in the unwaxed area of the P-type silicon; (5) diffusing a phosphorus source to form the N-type silicon; (6) removing the wax and the phosphorus-silicon glass and a peripheral PN junction formed during the diffusion process, etching the back side of the siliconwafer; (7) performing annealing; (8) depositing a front passivation film and a back passivation film; (9) laser grooving the back side to pass through the back passivation film; (10) printing and drying back silver electrode paste; (11) printing and drying the aluminum paste on the back side; (12) printing and drying positive silver electrode paste on the N-type film; (13) performing high-temperature sintering; and (14) performing anti-LID annealing. The passivation effect of the front passivation film and the field passivation effect of the N-type film can reduce the recombination rate of minority carriers, and enhance the passivation effect. The N-type film can reduce the contact resistance and improve the photoelectric conversion efficiency of the cell.