The invention discloses an interface charge compensation normally-closed diamond-based field-effect transistor and a fabrication method thereof. The interface charge compensation normally-closed diamond-based field-effect transistor comprises a diamond substrate, a single-crystal diamond epitaxial thin film, a conductive channel, a source, a drain, a donor-acceptor material layer and a gate electrode, wherein a layer of single-crystal diamond epitaxial thin film is arranged on the diamond substrate, the source and the drain are arranged on the single-crystal diamond epitaxial thin film, the conductive channel is formed on the single-crystal diamond epitaxial thin film between the source and the drain, the donor-acceptor material layer covers a part of the conductive channel between the source and the drain or the donor-acceptor material layer covers all conductive channel, a part of the source and a part of the drain, the Fermi level of the donor-acceptor material layer is higher thanthe Fermi level of the conductive channel, and the gate electrode is arranged on the donor-acceptor material layer. By the normally-closed diamond-based field-effect transistor, the performance of theconductive channel cannot be damaged, and meanwhile, the current passing capability between the source and the drain of the device can be ensured.