基本信息:
- 专利标题： 栅极电介质保留的栅极切割工艺
- 专利标题（英）：GATE DIELECTRIC PRESERVING GATE CUTTING PROCESS
- 申请号：CN201811062947.X 申请日：2018-09-12
- 公开(公告)号：CN109817580A 公开(公告)日：2019-05-28
- 发明人： 古淑瑗 , 孙志铭 , 郑振辉
- 申请人： 台湾积体电路制造股份有限公司
- 申请人地址： 中国台湾新竹
- 专利权人： 台湾积体电路制造股份有限公司
- 当前专利权人： 台湾积体电路制造股份有限公司
- 当前专利权人地址： 中国台湾新竹
- 代理机构： 北京德恒律治知识产权代理有限公司
- 代理人： 章社杲; 李伟
- 优先权： 62/588,834 2017.11.20 US
- 主分类号： H01L21/8234
- IPC分类号： H01L21/8234 ; H01L27/088
Gate cutting techniques for integrated circuit devices, particularly for fin-like field effect transistor devices, are disclosed herein. An exemplary method includes receiving an integrated circuit device that includes a gate structure and performing a gate cutting process to separate the gate structure into a first gate structure and a second gate structure. The gate cutting process includes selectively removing a portion of the gate structure, such that a residual gate dielectric layer extends between the first gate structure and the second gate structure. In some implementations, the residual gate dielectric includes a high-k dielectric material. The method further includes forming a gate isolation region between the first gate structure and the second gate structure. Embodiments also relate to a gate dielectric preserving gate cutting process.
公开/授权文献:
- CN109817580B 集成电路器件和制造集成电路器件的方法 公开/授权日：2022-08-23
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/67 | .专门适用于在制造或处理过程中处理半导体或电固体器件的装置；专门适合于在半导体或电固体器件或部件的制造或处理过程中处理晶片的装置 |
| ----------H01L21/71 | ..限定在组H01L21/70中的器件的特殊部件的制造 |
| ------------H01L21/78 | ...把衬底连续地分成多个独立的器件 |
| --------------H01L21/782 | ....制造多个器件，每一个由单个电路元件组成 |
| ----------------H01L21/822 | .....衬底是采用硅工艺的半导体的 |
| ------------------H01L21/8222 | ......双极工艺 |
| --------------------H01L21/8234 | .......MIS工艺 |