
基本信息:
- 专利标题: 一种熔盐法制备铜钴锡硫纳米晶的方法
- 专利标题(英):Method of preparing copper-cobalt-tin-sulfur nanocrystal by molten salt growth
- 申请号:CN201910137636.3 申请日:2019-02-25
- 公开(公告)号:CN109796051A 公开(公告)日:2019-05-24
- 发明人: 朱艳 , 秦存鹏 , 沈韬 , 孙淑红
- 申请人: 昆明理工大学
- 申请人地址: 云南省昆明市五华区学府路253号
- 专利权人: 昆明理工大学
- 当前专利权人: 昆明理工大学
- 当前专利权人地址: 云南省昆明市五华区学府路253号
- 主分类号: C01G51/00
- IPC分类号: C01G51/00 ; H01L31/032 ; B82Y30/00
The invention discloses a method of preparing copper-cobalt-tin-sulfur nanocrystal by molten salt growth and belongs to the field of thin-film solar cells. The method comprises mixing a copper salt, atin salt, a cobalt salt and a sulfur source with molten salt to obtain a mixture; roasting the mixture in a protective atmosphere, crushing, and washing to obtain CCTS (copper cobalt tin sulfur) nanocrystal with high purity stannite structure. The method is simple, low in cost and suitable for large-scale production and has good experimental repeatability and stability; the finished nanocrystal has good crystallinity and high purity and accordingly is applicable to the preparation of a copper-cobalt-tin-sulfur absorbing layer material matching with thin-film solar cells in terms of bandgap. The finished nanocrystal has form and composition which can be controlled by adjusting reaction temperature and molten salt content; cryptal particles in the molten salt are grown in balanced state; therefore, the nanocrystal grown by means of the molten salt growth is better than absorbing layer materials prepared in traditional modes in terms of characteristics.