The invention discloses a gate pole turn-off thyristor and a manufacturing method thereof. The gate pole turn-off thyristor comprises a first base region, a second base region, a third base region anda fourth base region which are sequentially formed from bottom to top and also comprises positive electrode metal, negative electrode metal and two gate pole metals, wherein the positive electrode metal is formed on a lower surface of the first base region, the negative electrode metal is formed on an upper surface of the fourth base region, the two gate pole metals are formed on an upper surfaceof the fourth base region and are respectively arranged at two sides of the negative electrode metal, the gate pole turn-off thyristor also comprises a first conductive type of heavy-doped buried layers and a first conductive type of heavy-doped injection regions, the injection regions are respectively formed below the two negative electrode metals, the buried layers are formed below the injection regions, the buried layers extend to the third base region from the upper surface of the third base region, and the injection regions penetrate through the fourth base region from the upper surfaceof the four base region. The invention also discloses a manufacturing method of the gate pole turn-off thyristor. The gate pole-turn-off thyristor has the advantages of small conduction voltage drop and specially short turn-off time.