基本信息:
- 专利标题： 晶体硅系太阳能电池及其制造方法
- 专利标题（英）：Crystalline silicon solar battery and method for producing same
- 申请号：CN201780039785.5 申请日：2017-06-28
- 公开(公告)号：CN109690791A 公开(公告)日：2019-04-26
- 发明人： 足立大辅
- 申请人： 株式会社钟化
- 申请人地址： 日本大阪府
- 专利权人： 株式会社钟化
- 当前专利权人： 株式会社钟化
- 当前专利权人地址： 日本大阪府
- 代理机构： 北京集佳知识产权代理有限公司
- 代理人： 李书慧; 金世煜
- 优先权： 2016-130762 2016.06.30 JP
- 国际申请： PCT/JP2017/023829 2017.06.28
- 国际公布： WO2018/003891 JA 2018.01.04
- 进入国家日期： 2018-12-26
- 主分类号： H01L31/0236
- IPC分类号： H01L31/0236 ; H01L31/0747
Provided is a crystalline solar battery comprising, on the primary surface of a crystalline silicon substrate (1) and in order from the crystalline silicon substrate side, an intrinsic silicon-based thin film (21) and a conductor-type silicon-based thin film (22). The crystalline silicon substrate has a pyramid-shaped irregularity structure on the surface thereof. The film thickness of the silicon-based thin film disposed on the peaks of the irregularities is thinner than the film thickness of the silicon-based thin film disposed on the mid-slopes of the irregularities. The film thickness of the silicon-based thin film disposed on the valleys of the irregularities is also preferably thinner than the film thickness of the silicon-based thin film disposed on the mid-slopes of the irregularities.
公开/授权文献:
- CN109690791B 晶体硅系太阳能电池及其制造方法 公开/授权日：2022-09-16