The invention discloses a quantitative representation method and device for dielectric microcosmic interface charge and trap characteristics. The method comprises the following steps: preparing a solid insulation sample of which the grid voltage is controllable, and obtaining the microcosmic morphology graph of the solid insulation sample to obtain the localized state distribution characteristicsof an insulation material; performing polarization processing on the solid insulation sample to obtain an electrostatic force gradient and potential distribution information on a probe in a depolarization process, and obtaining the sample surface potential distribution characteristics of the solid insulation sample; and according to the sample surface potential distribution characteristics, obtaining microcosmic interface surface electric charge density distribution characteristics by inversion, and according to the microcosmic interface surface electric charge density distribution characteristics and the localized state distribution characteristics, performing inverse reasoning to obtain the migration rate and the trap depth of the insulation material. The method has the advantages of being simple and convenient to operate and being high in accuracy, and can provide a new technology and a new method for the representation and the directional accurate regulation and control of a nano-composite material microcell interface, and the like.