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基本信息:
- 专利标题: 一种高压直流断路器半导体组件保护电路
- 申请号:CN201811529950.8 申请日:2018-12-14
- 公开(公告)号:CN109586264B 公开(公告)日:2020-01-17
- 发明人: 齐磊 , 东野忠昊 , 刘珂鑫 , 马江江 , 张晓青 , 沈弘
- 申请人: 华北电力大学
- 申请人地址: 北京市昌平区回龙观镇北农路2号
- 专利权人: 华北电力大学
- 当前专利权人: 华北电力大学
- 当前专利权人地址: 北京市昌平区回龙观镇北农路2号
- 代理机构: 北京高沃律师事务所
- 代理人: 程华
- 主分类号: H02H9/04
- IPC分类号: H02H9/04
The invention discloses a high-voltage DC breaker semiconductor module protection circuit. The high-voltage DC breaker semiconductor module protection circuit comprises: a DC power supply branch. Theprotection circuit comprises a DC power supply branch, a fault current generating branch, a thyristor voltage limiting branch, a semiconductor component branch and an energy absorption branch. The DCpower supply branch is connected in parallel with the fault current generating branch, the fault current generating branch, the thyristor voltage limiting branch and the semiconductor component branchare connected in series in order, and the semiconductor component branch is connected in parallel with the energy absorption branch. The DC power supply branch is configured to supply the power supply; the fault current generating branch is configured to generate a simulation fault current according to the power supply; the thyristor voltage limiting branch is configured to limit a reverse voltage; the semiconductor component branch is configured to switch off the simulation fault current; and the energy absorption branch is configured to absorb the energy generated when the semiconductor component branch switches off the simulation fault current. The high-voltage DC breaker semiconductor module protection circuit can prevent a test reactor from being broken down by over-voltage while verifying the fault switching-off capacity of the high-voltage DC breaker semiconductor module.
公开/授权文献:
- CN109586264A 一种高压直流断路器半导体组件保护电路 公开/授权日:2019-04-05