The invention provides a silicon-lithium niobate heterogeneity integrated scanning chip. The chip comprises a lithium niobate substrate, a silica cladding layer, and a silicon waveguide based core layer. The silica cladding layer is attached to the lithium niobate substrate. The core layer comprises an optical beam splitting unit, a curved waveguide, a thermo-optical phase shifter, and an emergentwaveguide array. The optical beam splitting unit, the curved waveguide, and the emergent waveguide array are located in the silica cladding layer. The thermo-optical phase shifter is disposed on thesilica cladding layer and is located on the curved waveguide. The optical beam splitting unit comprises a plurality of silicon waveguide based beam splitters. According to the silicon-lithium niobateheterogeneity integrated scanning chip, the silicon waveguide substrate is integrated with the heterogeneity of the lithium niobate material, and thermo-optic modulation is used based on the optical phased array technology, so as to change the the refractive index of the waveguide, change the phase of the beam, and deflect the exit direction, thereby obtaining a high-speed low-loss optical modulation chip structure of 1520nm to 1620nm optical communication waveband. The invention further provides a preparation method and application of the chip.