The invention discloses an efficient deep ultraviolet light emitting diode based on an h-BN (Boron Nitride)/p-AlGaN superlattice, and a preparation method thereof, and aims to solve the problems of low hole concentration and current congestion of an existing deep ultraviolet light emitting diode. The efficient deep ultraviolet light emitting diode disclosed by the invention comprises a substrate (1), an n-type AlxGal-xN layer (2), an AlyGal-yN/AlzGal-zN multi-quantum-well layer (3) and a p-type layer (4) from bottom to top and is characterized in that the p-type layer (4) adopts the h-BN/ p-AlGaN superlattice, i.e. an h-BN layer and a p-AlwGal-wN layer alternately grow, and each h-BN layer and the p-AlwGal-wN layer on the top of the h-BN layer are combined to form a period to totally growfor 5-40 periods. By use of the efficient deep ultraviolet light emitting diode, the electrical conductivity of the device is improved, hole concentration is increased, current congestion is alleviated, so that the deep ultraviolet light emitting diode with high light emitting power is obtained, and the efficient deep ultraviolet light emitting diode can be used in deep ultraviolet light emittingequipment.