基本信息:
- 专利标题： 经反射光匹配和表面动力模型优化蚀刻轮廓的方法和装置
- 专利标题（英）：Methods and apparatuses for etch profile optimization by reflectance spectra matching and surface kinetic model
- 申请号：CN201810902809.1 申请日：2018-08-09
- 公开(公告)号：CN109388842A 公开(公告)日：2019-02-26
- 发明人： 穆罕默德·德里亚·特泰克 , 萨拉瓦纳普里亚·西里拉曼 , 安德鲁·D·贝利三世 , 亚历克斯·帕特森 , 理查德·A·戈奇奥
- 申请人： 朗姆研究公司
- 申请人地址： 美国加利福尼亚州
- 专利权人： 朗姆研究公司
- 当前专利权人： 朗姆研究公司
- 当前专利权人地址： 美国加利福尼亚州
- 代理机构： 上海胜康律师事务所
- 代理人： 樊英如; 邱晓敏
- 优先权： 15/673,321 2017.08.09 US
- 主分类号： G06F17/50
- IPC分类号： G06F17/50
The invention relates to methods and apparatuses for etch profile optimization by reflectance spectra matching and surface kinetic model optimization. Disclosed are methods of optimizing a computer model which relates the etch profile of a feature on a semiconductor substrate to a set of independent input parameters (A), via the use of a plurality of model parameters (B). In some embodiments, themethods may include modifying one or more values of B so as to reduce a metric indicative of the differences between computed reflectance spectra generated from the model and corresponding experimental reflectance spectra with respect to one or more sets of values of A. In some embodiments, calculating the metric may include an operation of projecting the computed and corresponding experimental reflectance spectra onto a reduced-dimensional subspace and calculating the difference between the reflectance spectra as projected onto the subspace. Also disclosed are etch systems implementing such optimized computer models.