基本信息:
- 专利标题： 一种提高硅片最终清洗金属程度的方法及装置
- 专利标题（英）：Device and method for raising final metal cleaning degree of silicon slices
- 申请号：CN201810981196.5 申请日：2018-08-27
- 公开(公告)号：CN109326505A 公开(公告)日：2019-02-12
- 发明人： 赵剑锋 , 贺贤汉 , 洪漪 , 衫原一男
- 申请人： 上海申和热磁电子有限公司 , 杭州中芯晶圆半导体股份有限公司
- 申请人地址： 上海市宝山区宝山城市工业园区山连路181号
- 专利权人： 上海申和热磁电子有限公司,杭州中芯晶圆半导体股份有限公司
- 当前专利权人： 上海新欣晶圆半导体科技有限公司,杭州中芯晶圆半导体股份有限公司
- 当前专利权人地址： 上海市宝山区宝山城市工业园区山连路181号
- 代理机构： 上海顺华专利代理有限责任公司
- 代理人： 顾兰芳
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L21/67
The invention provides a method for raising the final metal cleaning degree of silicon slices. The method includes: step one, adding pure water into a hydrofluoric acid liquid tank, and completely circulating for 20min; step two, completely soaking a particle filter element of a particle filter and a metal filter element of a metal filter into isopropyl alcohol; step three, mounting the particle filter element, filling the hydrofluoric acid liquid tank with pure water, and circulating for 20min for at least three times; step four, mounting the metal filter element, filling the hydrofluoric acid liquid tank with pure water, and circulating for 20min for at least three times; step five, after liquid is normally added into a cleaning machine, cleaning simulated slices for 3h, replacing the liquid, then cleaning the simulated slices, and adopting an inductive coupling plasma mass spectrometer for testing metal contamination conditions of the simulated slices.
公开/授权文献:
- CN109326505B 一种提高硅片最终清洗金属程度的方法及装置 公开/授权日：2021-12-03
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/02 | .半导体器件或其部件的制造或处理 |