基本信息:
- 专利标题： 半导体制造中金属层的熔化处理的基于激光的系统和方法
- 专利标题（英）：LASER-BASED SYSTEMS AND METHODS FOR MELT-PROCESSING OF METAL LAYERS IN SEMICONDUCTOR MANUFACTURING
- 申请号：CN201810838344.8 申请日：2018-07-27
- 公开(公告)号：CN109309045A 公开(公告)日：2019-02-05
- 发明人： S·阿尼基特切夫 , A·M·霍里鲁克
- 申请人： 超科技公司
- 申请人地址： 美国加利福尼亚
- 专利权人： 超科技公司
- 当前专利权人： 威科仪器有限公司
- 当前专利权人地址： 美国加利福尼亚
- 代理机构： 中国国际贸易促进委员会专利商标事务所
- 代理人： 秦晨
- 优先权： 62/538,412 2017.07.28 US
- 主分类号： H01L21/768
- IPC分类号： H01L21/768 ; H01L21/67
The invention relates to laser-based systems and methods for melt-processing of metal layers in semiconductor manufacturing. Methods disclosed herein include scanning a focus spot formed by a laser beam over either a metal layer or IC structures that include a metal and a non-metal. The focus spot is scanned over a scan path that includes scan path segments that partially overlap. The focus spot has an irradiance and a dwell time selected to locally melt the metal layer or locally melt the metal of the IC structures without melting the non-metal. This results in rapid melting and recrystallization of the metal, which decreases the resistivity of the metal and results in improved performance of the IC chips being fabricated. Also disclosed is an example laser melt system for carrying out methods disclosed herein is also disclosed.
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/67 | .专门适用于在制造或处理过程中处理半导体或电固体器件的装置；专门适合于在半导体或电固体器件或部件的制造或处理过程中处理晶片的装置 |
| ----------H01L21/71 | ..限定在组H01L21/70中的器件的特殊部件的制造 |
| ------------H01L21/768 | ...利用互连在器件中的分离元件间传输电流 |