基本信息:
- 专利标题： 一种双电源控制多晶铸锭化料工艺
- 专利标题（英）：Dual-power-supply controlled polycrystalline ingot material melting technology
- 申请号：CN201811032155.8 申请日：2018-09-05
- 公开(公告)号：CN109137064A 公开(公告)日：2019-01-04
- 发明人： 段金刚 , 明亮 , 王锋 , 周社柱 , 黄美玲 , 邱昊
- 申请人： 湖南红太阳光电科技有限公司 , 山西中电科新能源技术有限公司
- 申请人地址： 湖南省长沙市高新开发区桐梓坡西路586号;
- 专利权人： 湖南红太阳光电科技有限公司,山西中电科新能源技术有限公司
- 当前专利权人： 湖南红太阳光电科技有限公司,山西中电科新能源技术有限公司
- 当前专利权人地址： 湖南省长沙市高新开发区桐梓坡西路586号;
- 代理机构： 湖南兆弘专利事务所
- 代理人： 周长清; 何文红
- 主分类号： C30B28/06
- IPC分类号： C30B28/06 ; C30B29/06
The invention discloses a dual-power-supply controlled polycrystalline ingot material melting technology. An open-cage semi-melting technology is adopted to melt silicon materials. In different melting stages, a coordination factor n of a top heater and a side heater is adjusted from 0.3 to 3.0, n=P1 / P2, wherein P1 refers to output power of the top heater, and P2 refers to output power of the side heater. The dual-power-supply controlled polycrystalline ingot material melting technology has the advantages of controllability in melting process, high safety, low cost, high efficiency and the like, and thereby being suitable for large-scale preparation and beneficial to industrialized production. Compared with a normal material melting technology, the dual-power-supply controlled polycrystalline ingot material melting technology also has the advantages that an obtained seed crystal layer is not completely melted and remains flat in the surface, and a larger seed crystal retaining area can be obtained.