
基本信息:
- 专利标题: 一种沟槽型MOS器件及其制造方法
- 专利标题(英):Groove-type MOS device and manufacturing method thereof
- 申请号:CN201710369652.6 申请日:2017-05-23
- 公开(公告)号:CN108962989A 公开(公告)日:2018-12-07
- 发明人: 蒋正洋
- 申请人: 中航(重庆)微电子有限公司
- 申请人地址: 重庆市沙坪坝区西永镇西永大道25号
- 专利权人: 中航(重庆)微电子有限公司
- 当前专利权人: 华润微电子(重庆)有限公司
- 当前专利权人地址: 重庆市沙坪坝区西永镇西永大道25号
- 代理机构: 上海光华专利事务所
- 代理人: 姚艳
- 主分类号: H01L29/78
- IPC分类号: H01L29/78 ; H01L21/336 ; H01L29/06 ; H01L29/423
The invention provides a groove-type MOS (Metal-Oxide-Semiconductor) device and a manufacturing method thereof. The groove-type MOS device at least includes a first conductive heavily doped substrate,a first conductive lightly doped epitaxial layer on the first conductive heavily doped substrate, a plurality of first conductive source regions, a plurality of grooves, a gate oxide layer and a polysilicon gate which are formed in the each groove, a second conductive lightly doped body region formed on the upper portion of the first conductive lightly doped epitaxial layer, a cellular region contact hole formed in the second conductive lightly doped body region, an insulating dielectric block covering the polysilicon gate in the groove of the cellular region, a second conductive heavily doped body contact region formed between two adjacent first conductive source regions of the cellular region, and a metal source electrode formed in the contact hole of the cellular region, wherein the plurality of first conductive source regions and the plurality of grooves are formed on the upper portion of the first conductive lightly doped epitaxial layer at intervals. The groove-type MOS device can guarantee stability of the device while improving the device density and reducing the conduction resistance.
公开/授权文献:
- CN108962989B 一种沟槽型MOS器件及其制造方法 公开/授权日:2020-10-13
IPC结构图谱:
H | 电学 |
--H01 | 基本电气元件 |
----H01L | 半导体器件;其他类目未包含的电固体器件 |
------H01L29/00 | 专门适用于整流、放大、振荡或切换,并具有至少一个电位跃变势垒或表面势垒的半导体器件;具有至少一个电位跃变势垒或表面势垒,例如PN结耗尽层或载流子集结层的电容器或电阻器;半导体本体或其电极的零部件 |
--------H01L29/02 | .按其半导体本体的特征区分的 |
----------H01L29/68 | ..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的 |
------------H01L29/70 | ...双极器件 |
--------------H01L29/762 | ....电荷转移器件 |
----------------H01L29/78 | .....由绝缘栅产生场效应的 |