基本信息:
- 专利标题： 一种层数均匀的大面积高质量石墨烯薄膜的制备方法
- 专利标题（英）：Method for producing uniform-layer, large-area and high-quality graphene film
- 申请号：CN201810225479.7 申请日：2018-03-19
- 公开(公告)号：CN108314019A 公开(公告)日：2018-07-24
- 发明人： 张志勇 , 马驰 , 陈诚 , 赵武 , 闫军锋 , 贠江妮 , 翟春雪 , 王雪文 , 王英楠 , 李展 , 吴民财
- 申请人： 西北大学
- 申请人地址： 陕西省西安市长安区郭杜镇学府大道一号西北大学
- 专利权人： 西北大学
- 当前专利权人： 西北大学
- 当前专利权人地址： 陕西省西安市长安区郭杜镇学府大道一号西北大学
- 代理机构： 北京轻创知识产权代理有限公司
- 代理人： 王新生
- 主分类号： C01B32/186
- IPC分类号： C01B32/186
The invention discloses a method for directly producing a graphene film on a silicon (Si) substrate through a chemical vapor deposition (CVD) technology with 2-naphthol as a solid carbon source and 1-octylphosphonic acid as an auxiliary carbon source. Compared with traditional methods for metal surface catalyzed production of the graphene film, the method in the invention has the advantages of directness in the production of the film, omission of the transfer process of the film, and avoiding of impaired quality caused by transfer of the graphene film. The method allows the graphene film to growth by combining two solid carbon sources through using the CVD technology for the first time, and improves the film formation quality, the coverage rate and the large-area property of the graphene film. The method has the advantages of simple process, easiness in control, and suitableness for being applied to daily experiments and production, and the graphene film is used in various fields as acurrent hottest two-dimensional semiconductor material. The method has high application values and meaning in the production of the graphene film.
公开/授权文献:
- CN108314019B 一种层数均匀的大面积高质量石墨烯薄膜的制备方法 公开/授权日：2022-09-20
IPC结构图谱:
| C | 化学；冶金 |
| --C01 | 无机化学 |
| ----C01B | 非金属元素；其化合物 |
| ------C01B32/00 | 碳；其化合物 |
| --------C01B32/15 | .纳米级碳材料 |
| ----------C01B32/182 | ..石墨烯 |
| ------------C01B32/184 | ...制备 |
| --------------C01B32/186 | ....化学气相沉积 |