基本信息:
- 专利标题： 热处理装置和温度控制方法
- 专利标题（英）：HEAT TREATMENT APPARATUS AND TEMPERATURE CONTROL METHOD
- 申请号：CN201810028997.X 申请日：2018-01-12
- 公开(公告)号：CN108305844A 公开(公告)日：2018-07-20
- 发明人： 山口达也 , 小原一辉 , 菊池康晃 , 吉井弘治
- 申请人： 东京毅力科创株式会社
- 申请人地址： 日本东京都
- 专利权人： 东京毅力科创株式会社
- 当前专利权人： 东京毅力科创株式会社
- 当前专利权人地址： 日本东京都
- 代理机构： 北京林达刘知识产权代理事务所
- 代理人： 刘新宇
- 优先权： 2017-003548 2017.01.12 JP
- 主分类号： H01L21/67
- IPC分类号： H01L21/67
The present invention provides a heat treatment apparatus and a temperature control method convergent to a regulated temperature in short time. A heat treatment apparatus includes: a processing container configured to accommodate a substrate; a furnace body having a heater configured to heat the substrate accommodated in the processing container and provided around the processing container; a blower configured to supply a coolant to a space between the processing container and the furnace body; and a controller having a continuous operation mode in which the blower is continuously energized and an intermittent operation mode in which energization and de-energization of the blower are repeated, and configured to control driving of the blower based on an instruction voltage. The controller drives the blower in the intermittent operation mode when the instruction voltage is higher than 0 V and lower than a predetermined threshold voltage.
公开/授权文献:
- CN108305844B 热处理装置和温度控制方法 公开/授权日：2023-02-28
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/67 | .专门适用于在制造或处理过程中处理半导体或电固体器件的装置；专门适合于在半导体或电固体器件或部件的制造或处理过程中处理晶片的装置 |