
基本信息:
- 专利标题: 多晶硅还原炉及使用多晶硅还原炉生长多晶硅的方法
- 申请号:CN201710012964.1 申请日:2017-01-09
- 公开(公告)号:CN108285146B 公开(公告)日:2019-12-20
- 发明人: 秦文军 , 银波 , 范协诚 , 王文 , 王瑞聪 , 罗飞飞 , 胡颖 , 杜新 , 夏高强
- 申请人: 新特能源股份有限公司
- 申请人地址: 新疆维吾尔自治区乌鲁木齐国家级高新技术产业开发区(新市区)甘泉堡高新技术产业园
- 专利权人: 新特能源股份有限公司
- 当前专利权人: 新特能源股份有限公司
- 当前专利权人地址: 新疆维吾尔自治区乌鲁木齐国家级高新技术产业开发区(新市区)甘泉堡高新技术产业园
- 代理机构: 北京天昊联合知识产权代理有限公司
- 代理人: 罗建民; 邓伯英
- 主分类号: C01B33/035
- IPC分类号: C01B33/035
The invention discloses a polycrystalline silicon reduction furnace and a method for growing polycrystalline silicon by using the polycrystalline silicon reduction furnace. A furnace chamber of the polycrystalline silicon reduction furnace is partitioned into at least two sub furnace chambers through a partition plate; an opening is formed in the partition plate; the opening gets close to the furnace top or the furnace bottom of the furnace chamber, an air inlet for air inflow is formed in one of the sub furnace chamber, and an air outlet for air exhaust is formed in the at least one remainingsub furnace chamber; feed air introduced into the sub furnace chamber provided with the air inlet flows into the adjacent sub furnace chamber through the opening in the partition plate, and feed airinside the sub furnace chamber provided with the air inlet and feed air inside the adjacent sub furnace chamber are opposite in flowing directions. The sub furnace chambers become plug flow reactors,the feed air flows inside the sub furnace chambers in one direction, and an airflow inside the sub furnace chambers is prevented from being disturbed in opposite direction, so that the distribution ofthe flow rate and temperature of the air flow is more uniform from the roots to the tops of silicon robs inside the sub furnace chambers, particularly, a viscous flow phenomenon around cross beams ofthe silicon rods is eliminated, and the materials of the cross beams are reduced.
公开/授权文献:
- CN108285146A 多晶硅还原炉及使用多晶硅还原炉生长多晶硅的方法 公开/授权日:2018-07-17
IPC结构图谱:
C | 化学;冶金 |
--C01 | 无机化学 |
----C01B | 非金属元素;其化合物 |
------C01B33/00 | 硅;其化合物 |
--------C01B33/02 | .硅 |
----------C01B33/021 | ..制备 |
------------C01B33/023 | ...用二氧化硅或含二氧化硅的物料的还原方法 |
--------------C01B33/035 | ....在存在硅、碳或耐熔金属(如钽或钨)的热丝情况下,或在存在热硅棒[通过沉积硅,如西门子法获得硅棒]情况下,用气态或汽化的硅化合物的分解或还原 |