![半导体激光器和用于制造半导体激光器的方法](/CN/2016/8/11/images/201680058288.jpg)
基本信息:
- 专利标题: 半导体激光器和用于制造半导体激光器的方法
- 专利标题(英):SEMICONDUCTOR LASER AND A METHOD FOR PRODUCING A SEMICONDUCTOR LASER
- 申请号:CN201680058288.5 申请日:2016-09-29
- 公开(公告)号:CN108141007A 公开(公告)日:2018-06-08
- 发明人: 弗兰克·辛格 , 诺温·文马尔姆 , 蒂尔曼·鲁戈海默 , 托马斯·基佩斯
- 申请人: 欧司朗光电半导体有限公司
- 申请人地址: 德国雷根斯堡
- 专利权人: 欧司朗光电半导体有限公司
- 当前专利权人: 欧司朗光电半导体有限公司
- 当前专利权人地址: 德国雷根斯堡
- 代理机构: 北京集佳知识产权代理有限公司
- 代理人: 丁永凡; 张春水
- 优先权: 102015116970.3 2015.10.06 DE
- 国际申请: PCT/EP2016/073352 2016.09.29
- 国际公布: WO2017/060160 DE 2017.04.13
- 进入国家日期: 2018-04-04
- 主分类号: H01S5/022
- IPC分类号: H01S5/022 ; H01S5/042 ; H01S5/02 ; H01S5/024 ; H01S5/22 ; H01S5/323
In one embodiment of the invention, the semiconductor laser (1) comprises a semiconductor layer sequence (2). The semiconductor layer sequence (2) contains an n-type region (23), a p-type region (21)and an active zone (22) lying between the two. A laser beam is produced in a resonator path (3). The resonator path (3) is aligned parallel to the active zone (22). In addition, the semiconductor laser (1) contains an electrical p-contact (41) and an electrical n-contact (43) each of which is located on the associated region (21, 23) of the semiconductor layer sequence (2) and is configured to input current directly into the associated region (21, 23). The n-contact (43) extends from the p-type region (21) through the active zone (22) and into the n-type region (23) and is located, when viewedfrom above, next to the resonator path (3).
公开/授权文献:
- CN108141007B 半导体激光器和用于制造半导体激光器的方法 公开/授权日:2020-01-17