基本信息:
- 专利标题： 铌酸锂单晶基板的制造方法
- 申请号：CN201680057085.4 申请日：2016-06-08
- 公开(公告)号：CN108138357A 公开(公告)日：2018-06-08
- 发明人： 梶谷富男
- 申请人： 住友金属矿山株式会社
- 申请人地址： 日本东京都
- 专利权人： 住友金属矿山株式会社
- 当前专利权人： 住友金属矿山株式会社
- 当前专利权人地址： 日本东京都
- 代理机构： 隆天知识产权代理有限公司
- 代理人： 李英艳; 张永康
- 优先权： 2015-208585 2015.10.23 JP
- 国际申请： PCT/JP2016/067070 2016.06.08
- 国际公布： WO2017/068810 JA 2017.04.27
- 进入国家日期： 2018-03-29
- 主分类号： C30B29/30
- IPC分类号： C30B29/30 ; C30B33/02 ; H01L41/187 ; H01L41/41
[Problem] To provide a method for producing a lithium niobate (LN) substrate having a small in-plane distribution of volume resistance values, as well as little variation in volume resistivity between substrates processed from the same ingot, by easy management of treatment conditions pertaining to temperature and time. [Solution] A method for producing an LN substrate using an LN single crystal grown by the Czochralski method, wherein a lithium niobate single crystal in the form of an ingot having an Fe concentration in the single crystal of 50-2,000 mass ppm is embedded in Al powder or a mixed powder of Al and Al2O3, heat treatment is conducted at a temperature of 450°C or higher and less than the melting point of aluminum of 660°C, and a lithium niobate single crystal substrate having volume resistivity controlled to within the range of 1×108Ω⋅cm to 2×1012Ω⋅cm is produced.
公开/授权文献:
- CN108138357B 铌酸锂单晶基板的制造方法 公开/授权日：2021-04-02