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专利标题：
ZrNiSn基高熵热电材料及其制备方法与热电器件
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- 专利标题（英）：ZrNiSn-based high-entropy thermoelectric material and preparation method thereof and thermoelectric device
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申请号：CN201711213691.3
申请日：2017-11-28
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公开(公告)号：CN108048725A
公开(公告)日：2018-05-18
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发明人：
刘福生
, 龚波
, 敖伟琴
, 李均钦
, 张朝华
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申请人：
深圳大学
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申请人地址：
广东省深圳市南山区南海大道3688号
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专利权人：
深圳大学
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当前专利权人：
深圳大学
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当前专利权人地址：
广东省深圳市南山区南海大道3688号
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代理机构：
深圳中一专利商标事务所
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代理人：
左光明
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主分类号：
C22C30/04
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IPC分类号：
C22C30/04
; C22F1/16
; C22C1/02
摘要：
本发明公开了一种ZrNiSn基高熵热电材料及其制备方法和应用。本发明ZrNiSn基高熵热电材料，其化学式为Zr1‑xMxNi1‑yCoySn1‑zSbz,x＝0.2～0.8，y＝0～0.2，z＝0～0.3，所述M包括V、Nb、Hf、Ti、Sc、Y、Ta、Mo元素中任意4‑5种元素。其制备方法包括按照ZrNiSn基高熵热电材料所含元素的化学计量比称取各纯金属原料，并进行熔炼处理和退火处理及放电等离子体烧结步骤。本发明ZrNiSn基高熵热电材料具有低的晶格热导率。所述ZrNiSn基高熵热电材料的制备方法工艺条件易控，保证了制备的ZrNiSn基高熵热电材料微观形貌和物化性能稳定，而且制备的效率高，降低了生产成本。
摘要（英）：
The invention discloses a ZrNiSn-based high-entropy thermoelectric material and a preparation method and application thereof. The chemical formula of the ZrNiSn-based high-entropy thermoelectric material is Zr<1>-MNi<1>-CoSn<1>-Sb, wherein x=0.2-0.8, y=0-0.2, and z=0-0.3; and M comprises any 4-5 elements of V, Nb, Hf, Ti, Sc, Y, Ta and Mo. The preparation method comprise the steps that all pure metal raw materials are weighed and taken according to the stoichiometric ratio of the elements contained by the ZrNiSn-based high-entropy thermoelectric material, and the steps of smelting treatment, annealing treatment and discharging plasma sintering are conducted. The ZrNiSn-based high-entropy thermoelectric material has the low lattice thermal conductivity; the technological condition of the preparation method of the ZrNiSn-based high-entropy thermoelectric material is easy to control, stability of microstructure and physicochemical properties of the prepared ZrNiSn-basedhigh-entropy thermoelectric material is ensured, the preparation efficiency is high, and the production cost is reduced.
