基本信息:
- 专利标题： 采用PE-TEOS工艺制备二氧化硅薄膜的方法及设备
- 专利标题（英）：Method and device for preparing silicon dioxide thin film by adopting PE-TEOS process
- 申请号：CN201711189426.6 申请日：2017-11-24
- 公开(公告)号：CN108018538A 公开(公告)日：2018-05-11
- 发明人： 侯龙 , 刘品 , 邱通令 , 凃维
- 申请人： 中航(重庆)微电子有限公司
- 申请人地址： 重庆市沙坪坝区西永镇西永大道25号
- 专利权人： 中航(重庆)微电子有限公司
- 当前专利权人： 华润微电子(重庆)有限公司
- 当前专利权人地址： 重庆市沙坪坝区西永镇西永大道25号
- 代理机构： 上海光华专利事务所
- 代理人： 余明伟
- 主分类号： C23C16/40
- IPC分类号： C23C16/40 ; C23C16/455
The invention provides a method and a device for preparing a silicon dioxide thin film by adopting a PE-TEOS process. The method comprises the following steps: (1) carrying out gasification treatmenton a TEOS liquid, so as to produce TEOS gas; (2) injecting oxygen and the TEOS gas into a reaction cavity, wherein the ratio of the oxygen flow rate to the TEOS liquid flow rate is higher than or equal to 3.2; (3) after carrying out dissociation on the oxygen and the TEOS gas, enabling the dissociated oxygen and TEOS gas to react, so as to produce the silicon dioxide thin film. Through the methodand the device provided by the invention, the problem that a silicon dioxide thin film prepared by adopting a conventional PE-TEOS process cannot serve as a groove mask is solved.