基本信息:
- 专利标题： 在金属线的阵列的心轴及非心轴线中形成自对准切口的设备及方法
- 专利标题（英）：Apparatus and method of forming self-aligned cuts in mandrel and non-mandrel lines of an array of metal lines
- 申请号：CN201710858640.X 申请日：2017-09-21
- 公开(公告)号：CN107863308A 公开(公告)日：2018-03-30
- 发明人： 古拉密·波奇 , 杰森·伊葛尼·史蒂芬
- 申请人： 格芯公司
- 申请人地址： 英属开曼群岛大开曼岛
- 专利权人： 格芯公司
- 当前专利权人： 格芯公司
- 当前专利权人地址： 英属开曼群岛大开曼岛
- 代理机构： 北京戈程知识产权代理有限公司
- 代理人： 程伟; 王锦阳
- 优先权： 15/271,497 2016.09.21 US
- 主分类号： H01L21/67
- IPC分类号： H01L21/67 ; H01L21/68 ; H01L21/768 ; H01L23/528
The invention relates to an apparatus and a method of forming self-aligned cuts in a mandrel and non-mandrel lines of an array of metal lines, wherein the method includes providing a structure havinga first, second and third hardmask layer and a mandrel layer disposed respectively over a dielectric stack. An array of mandrels, a beta trench and a gamma trench are patterned into the structure. First inner spacers are formed on sidewalls of the beta trench and second inner spacers are formed on sidewalls of the gamma trench. The first and second inner spacers form a portion of a pattern. The pattern is etched into the dielectric stack to form an array of mandrel and non-mandrel metal lines extending in a Y direction and being self-aligned in an X direction. The portion of the pattern formedby the first and second inner spacers forms a first pair of cuts in a mandrel line and a second pair of cuts in a non-mandrel line respectively. The cuts are self-aligned in the Y direction.
公开/授权文献:
- CN107863308B 在金属线的阵列的心轴及非心轴线中形成自对准切口的设备及方法 公开/授权日：2021-09-10
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/67 | .专门适用于在制造或处理过程中处理半导体或电固体器件的装置；专门适合于在半导体或电固体器件或部件的制造或处理过程中处理晶片的装置 |