![气柜](/CN/2016/8/7/images/201680035844.jpg)
基本信息:
- 专利标题: 气柜
- 专利标题(英):Gas cabinets
- 申请号:CN201680035844.7 申请日:2016-05-16
- 公开(公告)号:CN107771353A 公开(公告)日:2018-03-06
- 发明人: J·R·德普雷斯 , B·L·钱伯斯 , J·D·斯威尼 , R·S·雷 , S·E·毕夏普
- 申请人: 恩特格里斯公司
- 申请人地址: 美国马萨诸塞州
- 专利权人: 恩特格里斯公司
- 当前专利权人: 恩特格里斯公司
- 当前专利权人地址: 美国马萨诸塞州
- 代理机构: 北京律盟知识产权代理有限责任公司
- 代理人: 顾晨昕
- 优先权: 62/162,777 2015.05.17 US
- 国际申请: PCT/US2016/032741 2016.05.16
- 国际公布: WO2016/187137 EN 2016.11.24
- 进入国家日期: 2017-12-19
- 主分类号: H01L21/324
- IPC分类号: H01L21/324 ; H01L21/67 ; F17C11/00 ; F17C13/00
Gas supply systems and methods are described for delivery of gas to gas-utilizing process tools, e.g., gas-utilizing tools for manufacturing of semiconductor products, flat-panel displays, solar panels, etc. The gas supply systems may comprise gas cabinets that are arranged with adsorbent- based and/or interiorly pressure-regulated gas supply vessels therein, and a gas mixing manifold is described, which may be disposed in the gas cabinet or operated in a standalone fashion. In one aspect, gas supply systems are described in which vessels susceptible to cooling involving diminution of gas supply pressure are processed after pressure-controlled termination of dispensing operation, for dispensing operation achieving utilization of gas remaining in the vessel after such termination.
公开/授权文献:
- CN107771353B 气柜 公开/授权日:2022-02-01
IPC结构图谱:
H | 电学 |
--H01 | 基本电气元件 |
----H01L | 半导体器件;其他类目未包含的电固体器件 |
------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
--------H01L21/02 | .半导体器件或其部件的制造或处理 |
----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
------------H01L21/18 | ...器件有由周期表第Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体,如掺杂材料 |
--------------H01L21/26 | ....用波或粒子辐射轰击的 |
----------------H01L21/324 | .....用于改善半导体材料性能的热处理,例如退火、烧结 |