![半导体装置](/CN/2017/1/255/images/201711277647.jpg)
基本信息:
- 专利标题: 半导体装置
- 专利标题(英):Semiconductor device
- 申请号:CN201711277647.9 申请日:2012-10-16
- 公开(公告)号:CN107749401A 公开(公告)日:2018-03-02
- 发明人: 安永尚司 , 山上守
- 申请人: 罗姆股份有限公司
- 申请人地址: 日本京都府
- 专利权人: 罗姆股份有限公司
- 当前专利权人: 罗姆股份有限公司
- 当前专利权人地址: 日本京都府
- 代理机构: 北京尚诚知识产权代理有限公司
- 代理人: 龙淳
- 优先权: 2011-238575 2011.10.31 JP
- 主分类号: H01L21/60
- IPC分类号: H01L21/60 ; H01L21/603 ; H01L23/31 ; H01L23/373 ; H01L23/433 ; H01L23/495
To provide a semiconductor device capable of more efficiently dissipating heat from a semiconductor chip. The present invention is provided with a die pad (11) having a die-pad primary surface (111) and a die-pad back surface (112), a semiconductor chip (41) mounted on the die-pad primary surface (111), an encapsulating resin part (7) provided with a concave part (75) for exposing the die-pad backsurface (112), the encapsulating resin part covering the die pad (11) and the semiconductor chip (41), and a heat-dissipating layer (6) disposed on the concave part (75). The concave part (75) is positioned in the widening direction of the die-pad back surface (112) and farther outward than the die pad (11), and has a concave groove (753) having a portion positioned farther toward the die-pad primary surface (111) than the die-pad back surface (112). Part of the heat-dissipating layer (6) fills the concave groove (753), and the heat-dissipating layer has a joining layer (66) contacting the die-pad back surface (112).
IPC结构图谱:
H | 电学 |
--H01 | 基本电气元件 |
----H01L | 半导体器件;其他类目未包含的电固体器件 |
------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
--------H01L21/02 | .半导体器件或其部件的制造或处理 |
----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
------------H01L21/50 | ...应用H01L21/06至H01L21/326中的任一小组都不包含的方法或设备组装半导体器件的 |
--------------H01L21/60 | ....引线或其他导电构件的连接,用于工作时向或由器件传导电流 |