![偏置电路及其构成的射频功率放大器](/CN/2017/1/195/images/201710979182.jpg)
基本信息:
- 专利标题: 偏置电路及其构成的射频功率放大器
- 专利标题(英):Biasing circuit and radio frequency power amplifier formed by such biasing circuit
- 申请号:CN201710979182.5 申请日:2017-10-19
- 公开(公告)号:CN107733380A 公开(公告)日:2018-02-23
- 发明人: 张长伟 , 赵奂
- 申请人: 湖南格兰德芯微电子有限公司
- 申请人地址: 湖南省株洲市天元区中达路9号企业会所四楼
- 专利权人: 湖南格兰德芯微电子有限公司
- 当前专利权人: 湖南格兰德芯微电子有限公司
- 当前专利权人地址: 湖南省株洲市天元区中达路9号企业会所四楼
- 代理机构: 上海浦一知识产权代理有限公司
- 代理人: 焦天雷
- 主分类号: H03F3/19
- IPC分类号: H03F3/19 ; H03F3/21 ; H03F3/24 ; H03F1/30 ; H03F1/32
The invention discloses a biasing circuit used for a radio frequency power amplifier, and the biasing circuit comprises a first biasing circuit and a second biasing circuit which are connected in series, wherein a first end of the first biasing circuit is connected with a base electrode of an amplification device, a second end of the first biasing circuit is connected with the first end of the second biasing circuit, and the second end of the second biasing circuit is grounded; the invention also discloses a radio frequency power amplifier comprising the biasing circuit, and the radio frequency power amplifier comprises a power source, wherein one end of the power source is grounded, the other end of the power source is connected with the base electrode of the amplification device throughan input matching network and a capacitor C3 which are connected in series, an emitting electrode of the amplification device is grounded, and a collection electrode of the amplification device is connected with a circuit power supply through a choke coil and further connected with an antenna end through an output matching network. The biasing circuit provided by the invention is used for the radio frequency power amplifier and can simultaneously improve linearity and thermal stability of the radio frequency power amplifier.
公开/授权文献:
- CN107733380B 偏置电路及其构成的射频功率放大器 公开/授权日:2024-08-13
IPC结构图谱:
H | 电学 |
--H03 | 基本电子电路 |
----H03F | 放大器 |
------H03F3/00 | 只带有电子管或只带有半导体器件作为放大元件的放大器 |
--------H03F3/181 | .低频放大器,例如音频前置放大器 |
----------H03F3/19 | ..只带有半导体器件 |