基本信息:
- 专利标题： 低漏电流的动态随机存取存储器及其相关制造方法
- 专利标题（英）：Dynamic random access memory with low leakage current and related manufacturing method thereof
- 申请号：CN201710671760.9 申请日：2017-08-08
- 公开(公告)号：CN107706178A 公开(公告)日：2018-02-16
- 发明人： 黄立平
- 申请人： 钰创科技股份有限公司
- 申请人地址： 中国台湾新竹市
- 专利权人： 钰创科技股份有限公司
- 当前专利权人： 钰创科技股份有限公司
- 当前专利权人地址： 中国台湾新竹市
- 代理机构： 深圳新创友知识产权代理有限公司
- 代理人： 江耀纯
- 优先权： 62/371,847 2016.08.08 US
- 主分类号： H01L27/108
- IPC分类号： H01L27/108 ; H01L21/8242
The invention provides a dynamic random access memory with low leakage current and a related manufacturing method thereof. The manufacturing method of a dynamic random access memory (DRAM) with low leakage current includes forming a plurality of gates within a substrate of the DRAM; forming a plurality of drain/sources within the substrate of the DRAM by a first ion implantation; and forming a plurality of lightly doped drains under all of the plurality of drain/sources or partial drain/sources of the plurality of drain/sources by a second ion implantation after the plurality of drain/sourcesare formed. The plurality of lightly doped drains is used for reducing a leakage current within the DRAM, and the second ion implantation has a predetermined incident angle. The plurality of lightly doped drains can effectively reduce total leakage current of the DRAM. The standby time of portable electronic products with the DRAM can be greatly increased.
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L27/00 | 由在一个共用衬底内或其上形成的多个半导体或其他固态组件组成的器件 |
| --------H01L27/02 | .包括有专门适用于整流、振荡、放大或切换的半导体组件并且至少有一个电位跃变势垒或者表面势垒的；包括至少有一个跃变势垒或者表面势垒的无源集成电路单元的 |
| ----------H01L27/04 | ..其衬底为半导体的 |
| ------------H01L27/06 | ...在非重复结构中包括有多个单个组件的 |
| --------------H01L27/105 | ....包含场效应组件的 |
| ----------------H01L27/108 | .....动态随机存取存储结构的 |