![一种硅电池片的标记方法](/CN/2017/1/162/images/201710812469.jpg)
基本信息:
- 专利标题: 一种硅电池片的标记方法
- 申请号:CN201710812469.9 申请日:2017-09-11
- 公开(公告)号:CN107622962B 公开(公告)日:2019-11-15
- 发明人: 刘恩华 , 杨冰 , 袁中存 , 党继东
- 申请人: 苏州阿特斯阳光电力科技有限公司 , 盐城阿特斯协鑫阳光电力科技有限公司
- 申请人地址: 江苏省苏州市高新区鹿山路199号
- 专利权人: 苏州阿特斯阳光电力科技有限公司,盐城阿特斯协鑫阳光电力科技有限公司
- 当前专利权人: 苏州阿特斯阳光电力科技有限公司,阜宁阿特斯阳光电力科技有限公司
- 当前专利权人地址: 江苏省苏州市高新区鹿山路199号
- 代理机构: 苏州威世朋知识产权代理事务所
- 代理人: 杨林洁
- 主分类号: H01L21/67
- IPC分类号: H01L21/67 ; H01L31/18
The invention discloses a silicon cell labeling method which comprises the following steps: designing N2 different graphite boat clamping points easy to label; machining N1 mounting holes around a cell compartment corresponding to each silicon cell, wherein one graphite boat clamping point easy to label is mounted in each mounting hole; coating a graphite boat; for the identified Arabic numerals represented by the clamping point types corresponding to the N1 mounting holes which are around the cell compartment of the current silicon cell and are arranged in sequence according to the circumferential position distribution of the mounting holes, rearranging the Arabic numerals according to the digital sequence from one end to the other end of the mathematical counting unit to get an N1-digitserial number of the current silicon cell represented with a base-N2 system; and taking the serial number as the labeling number of the current silicon cell. The silicon cell labeling method is helpful for the troubleshooting and optimized analysis of silicon cells.
公开/授权文献:
- CN107622962A 一种硅电池片的标记方法 公开/授权日:2018-01-23
IPC结构图谱:
H | 电学 |
--H01 | 基本电气元件 |
----H01L | 半导体器件;其他类目未包含的电固体器件 |
------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
--------H01L21/67 | .专门适用于在制造或处理过程中处理半导体或电固体器件的装置;专门适合于在半导体或电固体器件或部件的制造或处理过程中处理晶片的装置 |