The invention discloses a silicon carbide light trigger thyristor having a double layer thin n-base region. The silicon carbide light trigger thyristor comprises a SiC substrate, wherein the SiC substrate is sequentially provided with a first epitaxial layer, a second epitaxial layer, a third epitaxial layer, a fourth epitaxial layer, a fifth epitaxial layer and a sixth epitaxial layer, the sixthepitaxial layer has multiple bosses, an upper portion of the third epitaxial layer is embedded with a junction terminal, the junction terminal is arranged outside tail ends of the fourth epitaxial layer and the fifth epitaxial layer, an insulation medium film is further comprised, side walls of each boss, the surface of the fifth epitaxial layer among the bosses and side walls and the surface of ajunction terminal mesa are covered by the insulation medium film, an upper end surface of each boss of the sixth epitaxial layer is covered by an anode, and a lower end surface of the SiC substrate is covered by a cathode. The invention further discloses a manufacturing method of the silicon carbide light trigger thyristor having the double layer thin n-base region. The silicon carbide light trigger thyristor having the double layer thin n-base region is advantaged in that the structure is special, device performance is excellent. The manufacturing method is convenient for enforcement.