The invention discloses an integrated circuit device for an integrated EHV (extra-high voltage) resistor and a manufacturing method of the integrated circuit device. The method comprises the steps: forming an N-type well region and a P-type well region in a substrate, and forming field oxidation layers in some regions on the surfaces of the N-type well region and the P-type well region; forming silicon nitride layers and silicon oxide layers coating the silicon nitride layers in regions, in which high-voltage resistors are prefabricated, of the field oxidation layers; forming a gate oxide layer in a region which is not covered by the field oxidation layers; forming non-doped polysilicon on the silicon oxide layers, the gate oxide layer in the N-type well region and the gate oxide layer in the P-type well region; carrying out the doping of the non-doped polysilicon on the silicon oxide layers to form high-resistance polysilicon, carrying out the non-doped polysilicon on the gate oxide layers to form low-resistance polysilicon. The above method can achieve the integration of a high-voltage resistor which can bear a 500V voltage or more in an integrated circuit, saves the packaging cost, and improves the module reliability.