The invention provides a planar waveguide laser and self-Raman laser device based on a self-Raman laser crystal cleavage chip. The planar waveguide laser device is composed of a core layer, an inner cladding layer and an outer cladding layer. The medium of the core layer is a Raman crystal cleavage chip activated by trivalent rare earth ions and provided with a cleavage feature. The medium of the inner cladding layer is a wafer or a glass sheet with a refractive index lower than that of the medium of the core layer. The medium of the outer cladding layer is a wafer with good thermal conductivity. The self-Raman laser crystal cleavage chip is used as the core layer of the planar waveguide laser device so as to achieve low production cost and low light transmission loss. The planar waveguide laser device uses a planar waveguide structure, is suitable for large-area cooling, and can transmit waste heat generated by the operation of a fundamental-wave laser and a self-Raman laser timely to reduce a thermo-light effect. In addition, the waveguide structure can limit beam divergence and improve the optical power density in the gain medium, thereby achieving low-threshold high-power fundamental-wave laser and self-Raman laser output.